Asset Details
Do you wish to reserve the book?
Controlling magnetism in 2D CrI3 by electrostatic doping
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Controlling magnetism in 2D CrI3 by electrostatic doping
Do you wish to request the book?
Controlling magnetism in 2D CrI3 by electrostatic doping
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Controlling magnetism in 2D CrI3 by electrostatic doping
2018
Overview
The atomic thickness of two-dimensional materials provides a unique opportunity to control their electrical1 and optical2 properties as well as to drive the electronic phase transitions3 by electrostatic doping. The discovery of two-dimensional magnetic materials4–10 has opened up the prospect of the electrical control of magnetism and the realization of new functional devices11. A recent experiment based on the linear magneto-electric effect has demonstrated control of the magnetic order in bilayer CrI3 by electric fields12. However, this approach is limited to non-centrosymmetric materials11,13–16 magnetically biased near the antiferromagnet–ferromagnet transition. Here, we demonstrate control of the magnetic properties of both monolayer and bilayer CrI3 by electrostatic doping using CrI3–graphene vertical heterostructures. In monolayer CrI3, doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened/weakened magnetic order with hole/electron doping. Remarkably, in bilayer CrI3, the electron doping above ~2.5 × 1013 cm−2 induces a transition from an antiferromagnetic to a ferromagnetic ground state in the absence of a magnetic field. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI3 by small gate voltages.
Publisher
Nature Publishing Group
We currently cannot retrieve any items related to this title. Kindly check back at a later time.