Asset Details
Do you wish to reserve the book?
Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir
Do you wish to request the book?
Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir
2020
Overview
The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal nanoparticles were used to locally etch the silicon substrate. This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching. The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer. Different metals (Au, Pt, Pd, Cu, and Ir) were investigated to derive a set of technologies as platform for specific applications. Especially, the shape of the 3D structures and the resulting reflectance have been investigated. The Si nanostructures fabricated using Au nanoparticles show a perfect light absorption with a reflectance below 0.3%. The demonstrated technology can be integrated into common fabrication processes for microelectromechanical systems.
Publisher
Beilstein-Institut
