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A Novel Spiral Si Drift Detector with a Constant Cathode Gap and Arbitrary Cathode Pitch Profiles
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A Novel Spiral Si Drift Detector with a Constant Cathode Gap and Arbitrary Cathode Pitch Profiles
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Journal Article
A Novel Spiral Si Drift Detector with a Constant Cathode Gap and Arbitrary Cathode Pitch Profiles
2026
Overview
In this paper, an innovative design of a silicon spiral drift detector (SDD) has been proposed. In this design, gaps under the SiO2 layer between the cathode rings are kept constant, with a minimum value to reduce the surface leakage current. The cathode pitch profile Pr as a function of radius r is allowed to change in an arbitrary way to achieve the optimum field distribution. The concept, design considerations, modeling and electrical simulations have been carried out for this novel structure with a hexagonal spiral silicon drift detector. Using one-dimensional analyses, we obtain the exact solution of the spiral design r=rθ with a near-arbitrary pitch profile Pr=P1rr11η, with η as an arbitrary real number. We also obtained the electric potential and field profiles on both surfaces of the detector. Using a Technology Computer-Aided Design (TCAD) tool, we made 3D simulations of the detector’s electrical properties. The hexagonal spiral silicon drift detector has excellent electrical properties: a uniform electric field, smooth distribution of electric potential and electron concentration, and a clear electron drift channel. The distributions of the electric field, electric potential, and electron concentration are symmetrical and smooth, which is beneficial for applications in photon sciences (X-ray) and safeguards and homeland security (particle radiation). The theoretical work and simulation results serve as solid foundations for the detector design and the expansion of semiconductor technology.
Publisher
MDPI AG,Multidisciplinary Digital Publishing Institute (MDPI)
Subject
