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Electric field-induced second-order nonlinear optical effects in silicon waveguides
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Journal Article
Electric field-induced second-order nonlinear optical effects in silicon waveguides
2017
Overview
The symmetry of crystalline silicon inhibits a second-order optical nonlinear susceptibility,
χ
(2)
, in complementary metal–oxide–semiconductor-compatible silicon photonic platforms. However,
χ
(2)
is required for important processes such as phase-only modulation, second-harmonic generation (SHG) and sum/difference frequency generation. Here, we break the crystalline symmetry by applying direct-current fields across p–i–n junctions in silicon ridge waveguides and induce a
χ
(2)
proportional to the large
χ
(3)
of silicon. The obtained
χ
(2)
is first used to perturb the permittivity (the direct-current Kerr effect) and achieve phase-only modulation. Second, the spatial distribution of
χ
(2)
is altered by periodically patterning p–i–n junctions to quasi-phase-match pump and second-harmonic modes and realize SHG. We measure a maximum SHG efficiency of
P
2
ω
/
P
ω
2
= 13 ± 0.5% W
−1
at
λ
ω
= 2.29 µm and with field-induced
χ
(2)
= 41 ± 1.5 pm V
–1
. We expect such field-induced
χ
(2)
in silicon to lead to a new class of complex integrated devices such as carrier-envelope offset frequency stabilizers, terahertz generators, optical parametric oscillators and chirp-free modulators.
The application of d.c. fields across p–i–n junctions in silicon ridge waveguides leads to crystal symmetry breaking. This induces a second-order optical nonlinear susceptibility that enables phase-only modulation and second-harmonic generation with an efficiency of ∼13% W
–1
at 2.29 µm.
Publisher
Nature Publishing Group UK,Nature Publishing Group
Subject
