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Journal Article
Janus monolayers of transition metal dichalcogenides
2017
Overview
A novel synthetic approach makes it possible to grow MoS
2
monolayers where S is fully replaced with Se atoms only in the top layer.
Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers
1
,
2
or stacked van der Waals heterostructures
3
,
4
. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics
5
,
6
. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields
7
,
8
or, as theoretically proposed, with an asymmetric out-of-plane structural configuration
9
. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS
2
monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.
Publisher
Nature Publishing Group UK,Nature Publishing Group
