Conference Proceeding

Creation and functionalization of defects in SiC by proton beam writing

Satoh, T., Haruyama, M., Ohshima, T., Lohrmann, A., Johnson, B. C., Gibson, B. C., Honda, T., Castelletto, S., Kraus, H., Kamiya, T., Astakhov, G. V., Dyakonov, V., Klein, J. R., McCallum, J. C., Makino, T., Hijikata, Y., Kada, W., Onoda, S., Hanaizumi, O.

2017

Overview

Proton beam writing (PBW) a with 1.7 MeV proton micro beam was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC were investigated at room temperature using a confocal laser scanning microscope. A peak around 900 nm associated with the silicon vacancy was observed for the irradiated SiC without any post-implantation processing such as annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. This suggests that the silicon vacancy can be applied as an ion tracking detector. In addition, since the silicon vacancy is known as a single photon source with a spin that can be controlled at room temperature, PBW is expected to be a useful tool to fabricate spin qubits.

• Publisher: Trans Tech Publications Ltd
• Subject: Australia / Defect engineering / Defects / Depth profiling / Ions / Microbeams / Particle beams / Photoluminescence / Photonics / Photons / Proton beam writing / Proton beams / Qubits (quantum computing) / Room temperature / Silicon / Silicon carbide / Silicon vacancy (Vsi) / Writing