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A steep-slope transistor based on abrupt electronic phase transition
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Journal Article
A steep-slope transistor based on abrupt electronic phase transition
2015
Overview
Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO
2
), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (‘sub-
kT/q
’) and reversible switching at room temperature. The transistor design, wherein VO
2
is implemented in series with the field-effect transistor’s source rather than into the channel, exploits negative differential resistance induced across the VO
2
to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.
The intrinsic properties of conventional semiconductors limits the speed and efficiency of field-effect transistors. Here, the authors take advantage of the insulator-to-metal transition in vanadium dioxide to create a transistor with reversible and steep-slope switching at room temperature.
Publisher
Nature Publishing Group UK,Nature Publishing Group
