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Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics
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Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics
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Journal Article
Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics
2015
Overview
High-mobility semiconducting polymers offer the opportunity to develop flexible and large-area electronics for several applications, including wearable, portable and distributed sensors, monitoring and actuating devices. An enabler of this technology is a scalable printing process achieving uniform electrical performances over large area. As opposed to the deposition of highly crystalline films, orientational alignment of polymer chains, albeit commonly achieved by non-scalable/slow bulk alignment schemes, is a more robust approach towards large-area electronics. By combining pre-aggregating solvents for formulating the semiconductor and by adopting a room temperature wired bar-coating technique, here we demonstrate the fast deposition of submonolayers and nanostructured films of a model electron-transporting polymer. Our approach enables directional self-assembling of polymer chains exhibiting large transport anisotropy and a mobility up to 6.4 cm
2
V
−1
s
−1
, allowing very simple device architectures to operate at 3.3 MHz. Thus, the proposed deposition strategy is exceptionally promising for mass manufacturing of high-performance polymer circuits.
Semiconducting polymers with high mobility are essential for the development of high-frequency flexible electronics, whose fabrications rely on robust printing techniques. Bucella
et al
. report the fabrication of
n
-type polymer field-effect transistors, with mobility up to 6.4 cm
2
V
−1
s operated at 3.3 MHz, by room temperature bar-coating technique.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Pub. Group
