Asset Details
Do you wish to reserve the book?
Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies
Do you wish to request the book?
Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies
2025
Overview
This paper explores the potential of phase change materials (PCM) for dynamically tuning the frequency response of a dumbbell u-slot defected ground structure (DGS)-based band stop filter. The DGSs are designed using co-planar waveguide (CPW) line structure on top of a barium strontium titanate (Ba0.6Sr0.4TiO3) (BST) thin film. BST film is used as the high-dielectric material for the planar DGS. Lower insertion loss of less than −2 dB below the lower cutoff frequency, and enhanced band-rejection with notch depth of −39.64 dB at 27.75 GHz is achieved by cascading two-unit cells, compared to −12.26 dB rejection with a single-unit cell using BST thin film only. Further tunability is achieved by using a germanium telluride (GeTe) PCM layer. The electrical properties of PCM can be reversibly altered by transitioning between amorphous and crystalline phases. We demonstrate that incorporating a PCM layer into a DGS device allows for significant tuning of the resonance frequency: a shift in resonance frequency from 30.75 GHz to 33 GHz with a frequency shift of 2.25 GHz is achieved, i.e., 7.32% tuning is shown with a single DGS cell. Furthermore, by cascading two DGS cells with PCM, an even wider tuning range is achievable: a shift in resonance frequency from 27 GHz to 30.25 GHz with a frequency shift of 3.25 GHz is achieved, i.e., 12.04% tuning is shown by cascading two DGS cells. The results are validated through simulations and measurements, showcasing excellent agreement.
Publisher
MDPI AG,MDPI
Subject
