Asset Details
Do you wish to reserve the book?
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing
Do you wish to request the book?
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing
2023
Overview
Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO
2
/HfO
2−x
(oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust nature of filament. A narrow cycle-to-cycle and device-to-device distribution were also demonstrated by the filament confinement in a limited region. The different concentrations of oxygen vacancies at each layer played a significant role in switching phenomena, as confirmed through X-ray photoelectron spectroscopy analysis. The analog weight update characteristics were found to strongly depend on the various conditions of voltage pulse parameters including its amplitude, width, and interval time. In particular, linear and symmetric weight updates for accurate learning and pattern recognition could be achieved by adopting incremental step pulse programming (ISPP) operation scheme which rendered a high-resolution dynamic range with linear and symmetry weight updates as a consequence of precisely controlled filament geometry. A two-layer perceptron neural network simulation with HfO
2
/HfO
2−x
synapses provided an 80% recognition accuracy for handwritten digits. The development of oxide/suboxide hafnium oxide memristive devices has the capacity to drive forward the development of efficient neuromorphic computing systems.
