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Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles
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Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles
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Journal Article
Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles
2024
Overview
Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS
2
with twist angles from 0° to 120°. The twist angles-dependent Moiré periodicity can be clearly observed, and the interlayer coupling shows a strong relationship to the twist angles. Moreover, the yield of TB-MoS
2
in bilayer MoS
2
and density of TB-MoS
2
are significantly improved to 17.2% and 28.9 pieces/mm
2
by tailoring gas flow rate and molar ratio of NaCl to MoO
3
. The proposed reconfiguring nucleation approach opens an avenue for the precise growth of TB-TMDCs for both fundamental research and practical applications.
Twisted bilayers of 2D semiconductors are being intensively investigated due to their emergent physical properties, but their controlled bottom-up synthesis remains challenging. Here, the authors report a confined-space chemical vapour deposition strategy to synthesize MoS
2
bilayers with twist angles ranging from 0° to 120°.
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