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Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications
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Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications
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Journal Article
Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications
2016
Overview
Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.
Plasma‐enhanced chemical vapor deposition (PECVD) is one of the promising methods for controllable synthesis of graphene with the advantages of low growth temperature and being catalyst‐free. This review summarizes recent advance in the PECVD growth of graphene on different substrates, and discusses the growth mechanism and its related applications in electrical devices, supercapacitors, sensors, and so on.
Publisher
John Wiley & Sons, Inc,John Wiley and Sons Inc
Subject
