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Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
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Journal Article
Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
2019
Overview
Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS
2x
Se
2(1-x)
via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 10
5
A W
−1
) and photoswitching ratio (~10
8
), as well as nonvolatile infrared memory with high program/erase ratio (~10
8
) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.
Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS
2x
Se
2(1-x)
as photodetectors with high responsivity of 2.4 × 10
5
A/W at 1550 nm and non-volatile memories with photo-switching ratio of 10
8
.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
