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Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma
Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma
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Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma
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Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma
Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma

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Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma
Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma
Journal Article

Numerical Assessment of a Metal-Insulator-Metal Waveguide-Based Plasmonic Sensor System for the Recognition of Tuberculosis in Blood Plasma

2023
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Overview
In this paper, a numerical analysis of a plasmonic sensor based on a metal-insulator-metal (MIM) waveguide is conducted for the detection of tuberculosis (TB)-infected blood plasma. It is not straightforward to directly couple the light to the nanoscale MIM waveguide, because of which two Si3N4 mode converters are integrated with the plasmonic sensor. This allows the efficient conversion of the dielectric mode into a plasmonic mode, which propagates in the MIM waveguide via an input mode converter. At the output port, the plasmonic mode is converted back to the dielectric mode via the output mode converter. The proposed device is employed to detect TB-infected blood plasma. The refractive index of TB-infected blood plasma is slightly lower than that of normal blood plasma. Therefore, it is important to have a sensing device with high sensitivity. The sensitivity and figure of merit of the proposed device are ~900 nm/RIU and 11.84, respectively.