Journal Article

Bound states at partial dislocation defects in multipole higher-order topological insulators

Bahl, Gaurav, Yamada, Sasha S., Peterson, Christopher W., Hughes, Taylor L., Li, Tianhe, Lin, Mao

2022

Overview

The bulk-boundary correspondence, which links a bulk topological property of a material to the existence of robust boundary states, is a hallmark of topological insulators. However, in crystalline topological materials the presence of boundary states in the insulating gap is not always necessary since they can be hidden in the bulk energy bands, obscured by boundary artifacts of non-topological origin, or, in the case of higher-order topology, they can be gapped altogether. Recently, exotic defects of translation symmetry called partial dislocations have been proposed to trap gapless topological modes in some materials. Here we present experimental observations of partial-dislocation-induced topological modes in 2D and 3D insulators. We particularly focus on multipole higher-order topological insulators built from circuit-based resonator arrays, since crucially they are not sensitive to full dislocation defects, and they have a sublattice structure allowing for stacking faults and partial dislocations. The development of higher-order topological insulators enables robust localization of energy at lower-dimensional boundaries. Here the authors demonstrate that partial dislocation in higher order topological insulators can be intuitively understood as a defect-induced topological phase boundary which supports 0D bound states.

• Publisher: Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
• Subject: 639/766/119/2792 / 639/766/119/2794 / Circuits / Crystal defects / Dislocation / Energy bands / Humanities and Social Sciences / Insulation / Localization / multidisciplinary / Multipoles / Robustness / Science / Science (multidisciplinary) / Stacking faults / Symmetry / Topological insulators / Topology