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Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory
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Journal Article
Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory
2024
Overview
Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge
4
Sb
6
Te
7
), to achieve record-low power density ≈ 5 MW/cm
2
and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also
simultaneously
exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 10
8
cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge
4
Sb
6
Te
7
nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.
Data-centric applications benefit from dense, low-power memory. Here the authors use a combination of chalcogenide superlattices and nanocomposites to achieve low switching voltage (0.7 V) and fast speed (40 ns) in 40-nm-scale phase-change memory.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
