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Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
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Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
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Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
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Journal Article
Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
2024
Overview
In-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm
2
) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 10
6
, and exceptionally high room-temperature mobility up to 406.7 cm
2
V
−1
s
−1
, four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm–940 nm), achieving function of motion detection and recognition.
The authors create a rippled-assisted optoelectronic array (18 × 18 pixels) for the all-day motion detection and recognition, possessing negative and positive optical detection as well as memory and computation capabilities.
