Asset Details
Do you wish to reserve the book?
Cadmium passivation induced negative differential resistance in cove edge graphene nanoribbon device
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Cadmium passivation induced negative differential resistance in cove edge graphene nanoribbon device
Do you wish to request the book?
Cadmium passivation induced negative differential resistance in cove edge graphene nanoribbon device
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Cadmium passivation induced negative differential resistance in cove edge graphene nanoribbon device
2025
Overview
Graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic devices due to their unique electronic and transport properties. In this study, we investigate the impact of passivation on cove-edge graphene nanoribbon (CGNR) using both cadmium (Cd) and hydrogen (H) atoms. Through a comprehensive density functional theory (DFT) analysis coupled with non-equilibrium Green’s function (NEGF) simulations, we explore the electronic transport properties and device behavior of these passivated CGNRs. Our results reveal a distinctive semiconductor-to-metal transition in the electronic properties of the Cd-passivated CGNRs. This transition, induced by the interaction between Cd atoms and the GNR edges, leads to a modulation of the bandstructure and a pronounced shift in the conductance characteristics. Interestingly, the Cd-passivated CGNR devices exhibit negative differential resistance (NDR) with remarkably high peak-to-valley current ratios (PVCRs). NDR is a phenomenon critical for high-speed switching, enables efficient signal modulation, making it valuable for nanoscale transistors, memory elements, and oscillators. The highest PVCR is measured to be 53.7 for Cd-CGNR-H which is x10 and x17 times higher than strained graphene nanoribbon and silicene nanoribbon respectively. These findings suggest the promising potential of passivated CGNRs as novel components for high-performance nanoelectronic devices.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
