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Reversible and selective ion intercalation through the top surface of few-layer MoS2
Reversible and selective ion intercalation through the top surface of few-layer MoS2
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Reversible and selective ion intercalation through the top surface of few-layer MoS2
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Reversible and selective ion intercalation through the top surface of few-layer MoS2
Reversible and selective ion intercalation through the top surface of few-layer MoS2

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Reversible and selective ion intercalation through the top surface of few-layer MoS2
Reversible and selective ion intercalation through the top surface of few-layer MoS2
Journal Article

Reversible and selective ion intercalation through the top surface of few-layer MoS2

2018
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Overview
Electrochemical intercalation of ions into the van der Waals gap of two-dimensional (2D) layered materials is a promising low-temperature synthesis strategy to tune their physical and chemical properties. It is widely believed that ions prefer intercalation into the van der Waals gap through the edges of the 2D flake, which generally causes wrinkling and distortion. Here we demonstrate that the ions can also intercalate through the top surface of few-layer MoS 2 and this type of intercalation is more reversible and stable compared to the intercalation through the edges. Density functional theory calculations show that this intercalation is enabled by the existence of natural defects in exfoliated MoS 2 flakes. Furthermore, we reveal that sealed-edge MoS 2 allows intercalation of small alkali metal ions ( e.g ., Li + and Na + ) and rejects large ions (e.g., K + ). These findings imply potential applications in developing functional 2D-material-based devices with high tunability and ion selectivity. Electrochemical ion intercalation in 2D layered materials is known to occur through the material’s edges, accompanied by frequent structural deformations. Here the authors show that in MoS2 flakes where the edges have been sealed, a reversible and ion-selective intercalation occurs through the top surface via the intrinsic defects.