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Long-term drift of Si-MOS quantum dots with intentional donor implants
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Journal Article
Long-term drift of Si-MOS quantum dots with intentional donor implants
2019
Overview
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1/
f
noise dependence, and a noise strength as low as
1
μ
eV
/
Hz
, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/
f
noise for devices with less than 50 implanted donors near the qubit.
Publisher
Nature Publishing Group UK,Nature Publishing Group
