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Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
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Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
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Journal Article
Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
2017
Overview
Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light–matter interface both to augment the defect emission and to aid in studying the defects’ properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
Publisher
National Academy of Sciences
Subject
