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Wafer-Scale Graphene Integrated Circuit

by Wu, Yanqing , Dimitrakopoulos, Christos , Meric, Inanc , Lin, Yu-Ming , Han, Shu-Jen , Valdes-Garcia, Alberto , Grill, Alfred , Avouris, Phaedon , Farmer, Damon B. , Sun, Yanning , Jenkins, Keith A.

in Applied sciences / Broadband / Circuit properties / Circuits / Decibels / Design. Technologies. Operation analysis. Testing / Dielectric materials / Drains / Electric current / Electric potential / Electric, optical and optoelectronic circuits / electronic circuits / Electronics / Exact sciences and technology / Graphene / Inductors / Integrated circuits / Materials science / Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits / Mixers / Optics / Optoelectronics / Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / Semiconductor wafers / Silicon / Silicon carbide / thermal stability / Transconductance / Transistors

2011

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2011

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2011

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Journal Article

Wafer-Scale Graphene Integrated Circuit

Wu, Yanqing,

Dimitrakopoulos, Christos,

Meric, Inanc,

Lin, Yu-Ming,

Han, Shu-Jen,

Valdes-Garcia, Alberto,

Grill, Alfred,

Avouris, Phaedon,

Farmer, Damon B.,

Sun, Yanning,

Jenkins, Keith A.

2011

Overview

A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.

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Publisher

American Association for the Advancement of Science,The American Association for the Advancement of Science

Subject

/ Design. Technologies. Operation analysis. Testing

/ Dielectric materials