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Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

by Han, Tae-Hee , Zhang, Lizhi , Zhu, Chenhui , Pan, Xiaoqing , Xu, Mingjie , Choi, Chungseok , Huang, Yu , Tan, Shaun , Nuryyeva, Selbi , Yang, Yang , Wang, Rui , Park, Changwon , Liao, Michael E. , Lee, Sung-Joon , Lee, Jin-Wook , Huynh, Kenny , Yoon, Mina , Goorsky, Mark S.

in 147/143 / 639/301/1005/1007 / 639/301/357/551 / 639/925/357/404 / Annealing / Competitiveness / Crystal defects / Crystal growth / Crystal structure / Crystals / Electronic devices / Entropy / Epitaxial growth / Film growth / Grain boundaries / Growth conditions / Growth kinetics / Humanities and Social Sciences / Iodides / Kinetics / Laboratories / Light emitting diodes / MATERIALS SCIENCE / Metal halides / multidisciplinary / Organic–inorganic nanostructures / Perovskites / Phase transitions / Photovoltaic cells / Preferred orientation / Science / Science (multidisciplinary) / Solar cells / Solid phases / Substrates / Synergistic effect / Synthesis and processing / Thin films

2020

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2020

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2020

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Journal Article

Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Han, Tae-Hee,

Zhang, Lizhi,

Zhu, Chenhui,

Pan, Xiaoqing,

Xu, Mingjie,

Choi, Chungseok,

Huang, Yu,

Tan, Shaun,

Nuryyeva, Selbi,

Yang, Yang,

Wang, Rui,

Park, Changwon,

Liao, Michael E.,

Lee, Sung-Joon,

Lee, Jin-Wook,

Huynh, Kenny,

Yoon, Mina,

Goorsky, Mark S.

2020

Overview

Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI 3 ) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI 3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI 3 showed efficiencies and stabilities superior to those of devices fabricated without NHE. Though literature reports metal halide perovskite epitaxial growth on various substrates, controlling film growth for device applications remains a challenge. Here, the authors report kinetic-controlled growth of halide perovskite thin films on various substrates via layered perovskite templates.

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Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio

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