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Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design
Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design
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Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design
Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design

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Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design
Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design
Journal Article

Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design

2024
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Overview
The reverse bias stability is a key concern for the commercialization and reliability of halide perovskite photovoltaics. Here, the robustness of perovskite‐silicon tandem solar cells to reverse bias electrical degradation down to −40 V is investigated. The two‐terminal tandem configuration, with the perovskite coupled to silicon, can improve the solar cell resistance to severe negative voltages when the tandem device is properly designed. While perovskite cells typically exhibit early reverse bias breakdown voltages, the serial connection with silicon cells with large shunt resistances and high voltage breakdown limits their negative polarization and prevent the passage of large current densities when reverse biased. The importance of careful optical design is illustrated, with bottom‐limited conditions required to prevent the perovskite top cell from exploring its own breakdown. This aspect is of great importance in the case of partial shading events when the solar spectrum is richer in the IR components than the standard AM1.5G. Notably, 100% of efficiency retained after polarization at −40 V in different stressing conditions is observed. The results presented suggest that standard industrial bypass diode schemes may be compatible with silicon/perovskite tandem photovoltaics and provide new guidelines for the standardization of the stressing protocols. The electrical stability of silicon/perovskite tandem solar cells at −40V is investigated. The voltage breakdown and the shunt resistance of the silicon bottom cell should be maximised to protect the perovskite top cell. In the case of partial shadowing, the cell is stable for hours at −40V in bottom‐limited conditions while it shows a fast degradation in top‐limited conditions.
Publisher
John Wiley & Sons, Inc,John Wiley and Sons Inc,Wiley