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Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
by
Varghese, Abin
, Ghosh, Sayantan
, Thakar, Kartikey
, Lodha, Saurabh
, Dhara, Sushovan
in
147/3
/ 639/624/1075/401
/ 639/766/1130
/ 639/766/119/1000/1018
/ Absorptivity
/ Dark current
/ Electromagnetic absorption
/ Flicker
/ Homojunctions
/ Humanities and Social Sciences
/ Integration
/ Lasers
/ multidisciplinary
/ P-n junctions
/ Photoresponse
/ Science
/ Science (multidisciplinary)
/ Switching
/ Tradeoffs
/ Transition metal compounds
/ Two dimensional materials
2021
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Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
by
Varghese, Abin
, Ghosh, Sayantan
, Thakar, Kartikey
, Lodha, Saurabh
, Dhara, Sushovan
in
147/3
/ 639/624/1075/401
/ 639/766/1130
/ 639/766/119/1000/1018
/ Absorptivity
/ Dark current
/ Electromagnetic absorption
/ Flicker
/ Homojunctions
/ Humanities and Social Sciences
/ Integration
/ Lasers
/ multidisciplinary
/ P-n junctions
/ Photoresponse
/ Science
/ Science (multidisciplinary)
/ Switching
/ Tradeoffs
/ Transition metal compounds
/ Two dimensional materials
2021
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Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
by
Varghese, Abin
, Ghosh, Sayantan
, Thakar, Kartikey
, Lodha, Saurabh
, Dhara, Sushovan
in
147/3
/ 639/624/1075/401
/ 639/766/1130
/ 639/766/119/1000/1018
/ Absorptivity
/ Dark current
/ Electromagnetic absorption
/ Flicker
/ Homojunctions
/ Humanities and Social Sciences
/ Integration
/ Lasers
/ multidisciplinary
/ P-n junctions
/ Photoresponse
/ Science
/ Science (multidisciplinary)
/ Switching
/ Tradeoffs
/ Transition metal compounds
/ Two dimensional materials
2021
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Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
Journal Article
Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
2021
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Overview
Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck in the realization of high performance detectors is their trap-dependent photoresponse that trades off responsivity with speed. This work demonstrates a facile method of attenuating this trade-off by nearly 2x through integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe
2
phototransistor. The tunable p-n junction allows modulation of the photocarrier population and width of the conducting channel independently from the phototransistor. Increased illumination current with the lateral p-n junction helps achieve responsivity enhancement upto 2.4x at nearly the same switching speed (14–16 µs) over a wide range of laser power (300 pW–33 nW). The added benefit of reduced dark current enhances specific detectivity (
D*
) by nearly 25x to yield a maximum measured flicker noise-limited
D*
of 1.1×10
12
Jones. High responsivity of 170 A/W at 300 pW laser power along with the ability to detect sub-1 pW laser switching are demonstrated.
In photodetectors based on 2D materials, a trade-off often exists between responsivity and speed. Here, the authors attenuate this issue via integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe
2
phototransistor.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
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