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Graphene plasmonic devices for terahertz optoelectronics
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Journal Article
Graphene plasmonic devices for terahertz optoelectronics
2020
Overview
Plasmonic excitations, consisting of collective oscillations of the electron gas in a conductive film or nanostructure coupled to electromagnetic fields, play a prominent role in photonics and optoelectronics. While traditional plasmonic systems are based on noble metals, recent work has established graphene as a uniquely suited materials platform for plasmonic science and applications due to several distinctive properties. Graphene plasmonic oscillations exhibit particularly strong sub-wavelength confinement, can be tuned dynamically through the application of a gate voltage, and span a portion of the infrared spectrum (including mid-infrared and terahertz (THz) wavelengths) that is not directly accessible with noble metals. These properties have been studied in extensive theoretical and experimental work over the past decade, and more recently various device applications are also beginning to be explored. This review article is focused on graphene plasmonic nanostructures designed to address a key outstanding challenge of modern-day optoelectronics – the limited availability of practical, high-performance THz devices. Graphene plasmons can be used as a means to enhance light–matter interactions at THz wavelengths in a highly tunable fashion, particularly through the integration of graphene resonant structures with additional nanophotonic elements. This capability is ideally suited to the development of THz optical modulators (where absorption is switched on and off by tuning the plasmonic resonance) and photodetectors (relying on plasmon-enhanced intraband absorption or rectification of charge-density waves), and promising devices based on these principles have already been reported. Novel radiation mechanisms, including light emission from electrically excited graphene plasmons, are also being explored for the development of compact narrowband THz sources.
