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Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
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Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
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Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet

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Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
Journal Article

Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet

2021
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Overview
Out-of-plane spin polarization σ z has attracted increasing interests of researchers recently, due to its potential in high-density and low-power spintronic devices. Noncollinear antiferromagnet (AFM), which has unique 120° triangular spin configuration, has been discovered to possess σ z . However, the physical origin of σ z in noncollinear AFM is still not clear, and the external magnetic field-free switching of perpendicular magnetic layer using the corresponding σ z has not been reported yet. Here, we use the cluster magnetic octupole in antiperovskite AFM Mn 3 SnN to demonstrate the generation of σ z . σ z is induced by the precession of carrier spins when currents flow through the cluster magnetic octupole, which also relies on the direction of the cluster magnetic octupole in conjunction with the applied current. With the aid of σ z , current induced spin-orbit torque (SOT) switching of adjacent perpendicular ferromagnet is realized without external magnetic field. Our findings present a new perspective to the generation of out-of-plane spin polarizations via noncollinear AFM spin structure, and provide a potential path to realize ultrafast high-density applications. One consistent challenge in spintronics is electrical control of the magnetisation. Here, You et al demonstrate switching of magnetisation in a heterostucture composed of Mn3SnN and Permalloy, making use of the out-of-plane spin polarization induced by currents in the antiferromagnetic Mn3SnN.