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High thermoelectric performance by resonant dopant indium in nanostructured SnTe
by
Lan, Yucheng
, Lukas, Kevin
, Opeil, Cyril
, Chen, Gang
, Esfarjani, Keivan
, Broido, David
, Zhang, Qian
, Liao, Bolin
, Liu, Weishu
, Ren, Zhifeng
in
Alloys
/ Atoms
/ Ball milling
/ Charge carriers
/ Doping
/ Electric Conductivity
/ Electric properties
/ Electrical resistivity
/ heat
/ Heat conductivity
/ Heat recovery
/ Hot pressing
/ Indium
/ Iridium - chemistry
/ Materials Testing
/ Melting
/ Microscopy, Electron, Scanning
/ milling
/ Models, Chemical
/ Nanostructures - chemistry
/ Physical Sciences
/ pressing
/ Seebeck effect
/ Simulation
/ solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
/ Tellurium - chemistry
/ Temperature
/ Thermal conductivity
/ Thermoelectric power generation
/ Tin Compounds - chemistry
/ Waste recovery
/ X-Ray Diffraction
2013
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High thermoelectric performance by resonant dopant indium in nanostructured SnTe
by
Lan, Yucheng
, Lukas, Kevin
, Opeil, Cyril
, Chen, Gang
, Esfarjani, Keivan
, Broido, David
, Zhang, Qian
, Liao, Bolin
, Liu, Weishu
, Ren, Zhifeng
in
Alloys
/ Atoms
/ Ball milling
/ Charge carriers
/ Doping
/ Electric Conductivity
/ Electric properties
/ Electrical resistivity
/ heat
/ Heat conductivity
/ Heat recovery
/ Hot pressing
/ Indium
/ Iridium - chemistry
/ Materials Testing
/ Melting
/ Microscopy, Electron, Scanning
/ milling
/ Models, Chemical
/ Nanostructures - chemistry
/ Physical Sciences
/ pressing
/ Seebeck effect
/ Simulation
/ solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
/ Tellurium - chemistry
/ Temperature
/ Thermal conductivity
/ Thermoelectric power generation
/ Tin Compounds - chemistry
/ Waste recovery
/ X-Ray Diffraction
2013
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High thermoelectric performance by resonant dopant indium in nanostructured SnTe
by
Lan, Yucheng
, Lukas, Kevin
, Opeil, Cyril
, Chen, Gang
, Esfarjani, Keivan
, Broido, David
, Zhang, Qian
, Liao, Bolin
, Liu, Weishu
, Ren, Zhifeng
in
Alloys
/ Atoms
/ Ball milling
/ Charge carriers
/ Doping
/ Electric Conductivity
/ Electric properties
/ Electrical resistivity
/ heat
/ Heat conductivity
/ Heat recovery
/ Hot pressing
/ Indium
/ Iridium - chemistry
/ Materials Testing
/ Melting
/ Microscopy, Electron, Scanning
/ milling
/ Models, Chemical
/ Nanostructures - chemistry
/ Physical Sciences
/ pressing
/ Seebeck effect
/ Simulation
/ solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
/ Tellurium - chemistry
/ Temperature
/ Thermal conductivity
/ Thermoelectric power generation
/ Tin Compounds - chemistry
/ Waste recovery
/ X-Ray Diffraction
2013
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High thermoelectric performance by resonant dopant indium in nanostructured SnTe
Journal Article
High thermoelectric performance by resonant dopant indium in nanostructured SnTe
2013
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Overview
From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the lead-containing chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the first-principles simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.
Publisher
National Academy of Sciences,National Acad Sciences
Subject
/ Atoms
/ Doping
/ heat
/ Indium
/ Melting
/ Microscopy, Electron, Scanning
/ milling
/ pressing
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