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NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
by
Zhou, Long
, Chang, Jingjing
, Lin, Zhenhua
, Guo, Xing
, Su, Jie
, Feng, Liping
, Hao, Yue
, Zhang, Jincheng
, Zhang, Bingjuan
in
buffer layers
/ contact engineering
/ Defects
/ Efficiency
/ Interfaces
/ lattice mismatches
/ Lifetime
/ NiO
/ perovskite solar cells
/ Photovoltaic cells
/ Spectrum analysis
2020
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NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
by
Zhou, Long
, Chang, Jingjing
, Lin, Zhenhua
, Guo, Xing
, Su, Jie
, Feng, Liping
, Hao, Yue
, Zhang, Jincheng
, Zhang, Bingjuan
in
buffer layers
/ contact engineering
/ Defects
/ Efficiency
/ Interfaces
/ lattice mismatches
/ Lifetime
/ NiO
/ perovskite solar cells
/ Photovoltaic cells
/ Spectrum analysis
2020
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Do you wish to request the book?
NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
by
Zhou, Long
, Chang, Jingjing
, Lin, Zhenhua
, Guo, Xing
, Su, Jie
, Feng, Liping
, Hao, Yue
, Zhang, Jincheng
, Zhang, Bingjuan
in
buffer layers
/ contact engineering
/ Defects
/ Efficiency
/ Interfaces
/ lattice mismatches
/ Lifetime
/ NiO
/ perovskite solar cells
/ Photovoltaic cells
/ Spectrum analysis
2020
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NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
Journal Article
NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells
2020
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Overview
Recent research shows that the interface state in perovskite solar cells is the main factor which affects the stability and performance of the device, and interface engineering including strain engineering is an effective method to solve this issue. In this work, a CsBr buffer layer is inserted between NiOx hole transport layer and perovskite layer to relieve the lattice mismatch induced interface stress and induce more ordered crystal growth. The experimental and theoretical results show that the addition of the CsBr buffer layer optimizes the interface between the perovskite absorber layer and the NiOx hole transport layer, reduces interface defects and traps, and enhances the hole extraction/transfer. The experimental results show that the power conversion efficiency of optimal device reaches up to 19.7% which is significantly higher than the efficiency of the device without the CsBr buffer layer. Meanwhile, the device stability is also improved. This work provides a deep understanding of the NiOx/perovskite interface and provides a new strategy for interface optimization. A CsBr buffer layer is inserted between NiOx hole transport layer and perovskite layer to relieve the lattice mismatch induced interface stress and induce more ordered crystal growth. The results show that the addition of the CsBr buffer layer optimizes the interface between the perovskite and NiOx, reduces interface defects and traps, and enhances the hole extraction/transfer.
Publisher
John Wiley & Sons, Inc,John Wiley and Sons Inc,Wiley
Subject
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