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Phonon Conduction in Silicon Nanobeam Labyrinths
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Phonon Conduction in Silicon Nanobeam Labyrinths
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Phonon Conduction in Silicon Nanobeam Labyrinths
Phonon Conduction in Silicon Nanobeam Labyrinths
Journal Article

Phonon Conduction in Silicon Nanobeam Labyrinths

2017
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Overview
Here we study single-crystalline silicon nanobeams having 470 nm width and 80 nm thickness cross section, where we produce tortuous thermal paths ( i . e . labyrinths) by introducing slits to control the impact of the unobstructed “line-of-sight” (LOS) between the heat source and heat sink. The labyrinths range from straight nanobeams with a complete LOS along the entire length to nanobeams in which the LOS ranges from partially to entirely blocked by introducing slits, s  = 95, 195, 245, 295 and 395 nm. The measured thermal conductivity of the samples decreases monotonically from ~47 W m −1  K −1 for straight beam to ~31 W m −1  K −1 for slit width of 395 nm. A model prediction through a combination of the Boltzmann transport equation and ab initio calculations shows an excellent agreement with the experimental data to within ~8%. The model prediction for the most tortuous path ( s  = 395 nm) is reduced by ~14% compared to a straight beam of equivalent cross section. This study suggests that LOS is an important metric for characterizing and interpreting phonon propagation in nanostructures.