Journal Article

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Pal, Chandana, Ray, Asim K, Chambrier, Isabelle, Cammidge, Andrew N, Cook, Michael J, Cain, Markys G, Murphy, Craig E, Chaure, Nandu B

2011

Overview

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10 −2 cm 2 V −1 s −1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

• Publisher: Taylor & Francis,IOP Publishing,Taylor & Francis Ltd,Taylor & Francis Group
• Subject: AFM / Chemical vapor deposition / Copper / Dielectrics / field effect mobility / Field effect transistors / Metal phthalocyanines / organic thin film transistor / Self-assembled monolayers / Self-assembly / Semiconductor devices / Silicon / Silicon dioxide / substituted copper phthalocyanine / Surface treatment / Threshold voltage / topology / Transistors