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Water-Soluble Sacrificial Layer of Srsub.3Alsub.2Osub.6 for the Synthesis of Free-Standing Doped Ceria and Strontium Titanate
by
Sanna, Simone
, Tebano, Antonello
, Krymskaya, Olga
in
Batteries
/ Cerium
/ Dielectric films
/ Electric properties
/ Epitaxy
/ Force and energy
/ Fuel cell industry
/ Fuel cells
/ Silicon
/ Thin films
2025
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Water-Soluble Sacrificial Layer of Srsub.3Alsub.2Osub.6 for the Synthesis of Free-Standing Doped Ceria and Strontium Titanate
by
Sanna, Simone
, Tebano, Antonello
, Krymskaya, Olga
in
Batteries
/ Cerium
/ Dielectric films
/ Electric properties
/ Epitaxy
/ Force and energy
/ Fuel cell industry
/ Fuel cells
/ Silicon
/ Thin films
2025
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Water-Soluble Sacrificial Layer of Srsub.3Alsub.2Osub.6 for the Synthesis of Free-Standing Doped Ceria and Strontium Titanate
by
Sanna, Simone
, Tebano, Antonello
, Krymskaya, Olga
in
Batteries
/ Cerium
/ Dielectric films
/ Electric properties
/ Epitaxy
/ Force and energy
/ Fuel cell industry
/ Fuel cells
/ Silicon
/ Thin films
2025
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Water-Soluble Sacrificial Layer of Srsub.3Alsub.2Osub.6 for the Synthesis of Free-Standing Doped Ceria and Strontium Titanate
Journal Article
Water-Soluble Sacrificial Layer of Srsub.3Alsub.2Osub.6 for the Synthesis of Free-Standing Doped Ceria and Strontium Titanate
2025
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Overview
Epitaxial layers of water-soluble Sr[sub.3]Al[sub.2]O[sub.6] were fabricated as sacrificial layers on SrTiO[sub.3] (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr[sub.3]Al[sub.2]O[sub.6] as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies.
Publisher
MDPI AG
Subject
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