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Journal Article
WIDEBAND 400 W PULSED POWER GAN AMPLIFIER
2008
Overview
Under class AB bias and CW opera- tion at 3.3 GHz, a typical 2.2 mm unit cell device obtains 56 percent peak power added effi- ciency (PAE) and a peak output power of 21.9 W. This cor- responds to a power density of 9.9 W/mm. This is about three times the 3.2 W/mm power density obtained at 28 V drain bias from a device without the field plate. The series equivalent optimum source and load impedances are Zsub s= 3.8 +j10.5 ohm and Zsub l=30 +j47 ohm, respectively.
Publisher
Horizon House Publications, Inc
Subject
