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$Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing$

Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing

by Paik, H , Lee, J H , Misra, R , Mundy, J A , Moyer, J A , Spila, T , Merz, T A , Schiffer, P , Muller, D A , Schlom, D G , Tashman, J W , Schubert, J

in Electron energy loss spectroscopy / Energy dissipation / Energy transmission / Epitaxial growth / Insulators / Interdiffusion / Metal-insulator transition / Molecular beam epitaxy / Oxidation / Phase transitions / Scanning electron microscopy / Scanning transmission electron microscopy / Solid phases / Substrates / Thin films / Titanium / Transmission electron microscopy / Vanadium

2014

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Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing

by Paik, H , Lee, J H , Misra, R , Mundy, J A , Moyer, J A , Spila, T , Merz, T A , Schiffer, P , Muller, D A , Schlom, D G , Tashman, J W , Schubert, J

2014

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$Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing$

Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing

by Paik, H , Lee, J H , Misra, R , Mundy, J A , Moyer, J A , Spila, T , Merz, T A , Schiffer, P , Muller, D A , Schlom, D G , Tashman, J W , Schubert, J

2014

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$Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing$

Paper

Epitaxial Growth of VO\$_{2}\$ by Periodic Annealing

Paik, H,

Lee, J H,

Misra, R,

Mundy, J A,

Moyer, J A,

Spila, T,

Merz, T A,

Schiffer, P,

Muller, D A,

Schlom, D G,

Tashman, J W,

Schubert, J

2014

Overview

We report the growth of ultrathin VO\$_{2}\$ films on rutile TiO\$_{2}\$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO\$_{2}\$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change {\\Delta}R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

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Publisher

Cornell University Library, arXiv.org

Subject

Electron energy loss spectroscopy

/ Energy dissipation

/ Energy transmission

/ Epitaxial growth

/ Insulators

/ Interdiffusion

/ Metal-insulator transition