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The restoration of gold leaf on sandstone sculptures requires structural stability, aesthetic considerations, and compliance with the principles of cultural heritage preservation. A primary issue is achieving visual and material compatibility between newly restored and original areas. Based on the “Diagnosis–Analysis–Selection–Restoration” methodology, the research team developed a targeted restoration approach for gilded stone sculptures, using the Shakyamuni sculpture at Erfo Temple in Chongqing as a case study. Assessment of the current situation revealed that over 70% of the sculpture’s surface exhibited gold leaf delamination. The composition and structure of the gold-sizing lacquer, lacquer plaster filler, ground layers, and pigments were investigated using SEM-EDS, XRD, Raman spectroscopy, and THM-Py-GC/MS techniques. The results confirmed that the sculpture featured a typical multilayer gilding structure with clear evidence of historical restorations. Considering both material performance and interfacial compatibility, an NHL2/SiO2/SF016 composite emulsion and traditional lacquer plaster were selected as the optimal materials for reattachment and infill, respectively. A scientific restoration protocol was developed, encompassing gentle cleaning, targeted reattachment and reinforcement, and region-specific repair methods. Principal Component Analysis (PCA) was used to evaluate the influence of temperature and humidity on the curing behavior of lacquer layers. Additionally, a non-invasive gold leaf color-matching technique was developed by controlling the surface roughness of the gold-sizing lacquer, effectively avoiding the damage caused by traditional color-matching methods.

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo x W 1− x Te 2 are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo x W 1− x Te 2 at x =25%. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo x W 1− x Te 2 is a Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo x W 1− x Te 2 a promising platform for transport and optics experiments on Weyl semimetals. A Type II Weyl fermion semimetal has been predicted in Mo x W 1− x Te 2 , but it awaits experimental evidence. Here, Belopolski et al . observe a topological Fermi arc in Mo x W 1− x Te 2 , showing it originates from a Type II Weyl fermion and offering a new platform to study novel transport phenomena in Weyl semimetals.

Atomic defects are easily created in the single-layer electronic devices of current interest and cause even more severe influence than in the bulk devices since the electronic quantum paths are obviously suppressed in the two-dimensional transport. Here we find a drop of chemical solution can repair the defects in the single-layer MoSe 2 field-effect transistors. The devices’ room-temperature electronic mobility increases from 0.1 cm 2 /Vs to around 30 cm 2 /Vs and hole mobility over 10 cm 2 /Vs after the solution processing. The defect dynamics is interpreted by the combined study of the first-principles calculations, aberration-corrected transmission electron microscopy, and Raman spectroscopy. Rich single/double Selenium vacancies are identified by the high-resolution microscopy, which cause some mid-gap impurity states and localize the device carriers. They are found to be repaired by the processing with the result of extended electronic states. Such a picture is confirmed by a 1.5 cm −1 red shift in the Raman spectra. Two-dimensional materials: Repairing atomic defects via solution processing Defects can heavily influence the electrical transport properties of three-dimensional materials. But their impact becomes even more pronounced in low-dimensional systems. Fengqi Song and colleagues use a combination of calculations and experiments to show that a simple drop of a chemical solution can repair the selenium vacancies in field-effect transistors made from single layer molybdenum diselenide. By reducing the number of vacancies, which localize the electronic transport, the authors increased the carrier mobilities to nearly the intrinsic value by 2–3 orders of magnitude. The defect dynamics is visualized by the high resolution electron microscopy and multislice simulations. Such an approach could provide a route for enabling practical devices to be made from these relatively fragile materials.

The high performance Mn 1.2 Co 1.5 Ni 0.3 O 4 (MCN) ceramic materials are successfully fabricated using nanoparticles which are synthesized by the reverse microemulsion method. The morphology, crystal structure and particle size distribution of MCN nanoparticles are characterized by the XRD, SEM, TEM and HRTEM. The results show the well single tetragonal spinel structure and the narrow particle size distribution about 40 nm. As the sintering temperature increasing from 1000 to 1250 °C, all the MCN ceramic samples prepared by above-mentioned nanoparticles show the same single tetragonal spinel structure. The thermal sensitive properties with high values of ρ 25 , B 25/100 , E a , and α 25 of MCN ceramics at different sintering temperatures are in the range of 68,805–497,730 Ω cm, 4578–5159 K, 0.395–0.445 eV, and −5.2 to −5.8 %/K, respectively. These features indicate that the microstructure and electrical properties of MCN ceramics are relevant to the sintering temperature.

The high performance Mn^sub 1.2^Co^sub 1.5^Ni^sub 0.3^O^sub 4^ (MCN) ceramic materials are successfully fabricated using nanoparticles which are synthesized by the reverse microemulsion method. The morphology, crystal structure and particle size distribution of MCN nanoparticles are characterized by the XRD, SEM, TEM and HRTEM. The results show the well single tetragonal spinel structure and the narrow particle size distribution about 40 nm. As the sintering temperature increasing from 1000 to 1250 °C, all the MCN ceramic samples prepared by above-mentioned nanoparticles show the same single tetragonal spinel structure. The thermal sensitive properties with high values of ρ^sub 25^, B^sub 25/100^, E^sub a^, and [alpha]^sub 25^ of MCN ceramics at different sintering temperatures are in the range of 68,805-497,730 Ω cm, 4578-5159 K, 0.395-0.445 eV, and -5.2 to -5.8 %/K, respectively. These features indicate that the microstructure and electrical properties of MCN ceramics are relevant to the sintering temperature.

The high performance Mn sub(1.2)Co sub(1.5)Ni sub(0.3)O sub(4) (MCN) ceramic materials are successfully fabricated using nanoparticles which are synthesized by the reverse microemulsion method. The morphology, crystal structure and particle size distribution of MCN nanoparticles are characterized by the XRD, SEM, TEM and HRTEM. The results show the well single tetragonal spinel structure and the narrow particle size distribution about 40 nm. As the sintering temperature increasing from 1000 to 1250 degree C, all the MCN ceramic samples prepared by above-mentioned nanoparticles show the same single tetragonal spinel structure. The thermal sensitive properties with high values of Ie sub(25), B sub(25/100), E sub(a), and alpha sub(25) of MCN ceramics at different sintering temperatures are in the range of 68,805-497,730 Omega cm, 4578-5159 K, 0.395-0.445 eV, and -5.2 to -5.8 %/K, respectively. These features indicate that the microstructure and electrical properties of MCN ceramics are relevant to the sintering temperature.

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo W Te are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo W Te at x=25%. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo W Te is a Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo W Te a promising platform for transport and optics experiments on Weyl semimetals.

Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.

Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscillations. Here we report the magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in the single crystal of topological semimetal Ta3SiTe6 with the magnetic field up to 38 T. Periodic amplitude of the oscillations reveals related information about the Fermi surface. The fast Fourier transformation spectra represent a single oscillatory frequency. The analysis of the oscillations shows the Fermi pocket with a cross-section area of 0.13 angstrom power minus 2. Combining magneto-transport measurements and the first-principles calculation, we find that these oscillations come from the hole pocket. Hall resistivity and the SdH oscillations recommend that Ta3SiTe6 is a hole dominated system.

We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear with their reciprocal frequency proportional to cos/theta , demonstrating the dominant transport of topological surface states. While the magnetic field is rotating in the sample surface, the planar Hall effect arises with sizeable oscillations following a relation of cos/theta sin/theta . Its amplitude reaches the maximum at the lowest temperature and drops to nearly zero at the temperature higher than 100 K. All these evidences consolidate such planar Hall oscillations as a new golden criterion on the topological surface transport.