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Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters.

In order to solve problems such as a slow switching speed, a high switching power, a loss of pure IGBT modulators, and the weak withstanding load short-circuit ability of pure SiC MOSFET modulators used for vacuum loads, this paper proposes a new scheme for high-voltage pulse modulators based on SiC MOSFET/IGBT hybrid connecting circuits. It has a low power loss like the pure SiC MOSFET modulator and a strong withstanding load short-circuit ability like the pure IGBT modulator. Firstly, the principle circuit of the hybrid connecting modulator are discussed and chosen. And the basic working processes of the hybrid parallel-series modulator is described in detail. Secondly, three key points in this new scheme are analyzed and designed as follows: the static and dynamic voltage sharing; the actualizing of the ZVS process for IGBTs; the improvement of short-circuit protection for SiC MOSFETs. A modulator consisting of 16-stage 1200 V-SiC MOSFETs and 1200 V-IGBTs in hybrid parallel-series states is tested. Based on the sample circuit, the working data, such as high-voltage pulse waveforms of 10 kV/2 KHz/10 μs, static and dynamic voltage sharing, the driving control sequence, the U/I sequence of the IGBT, the short-circuit protection waveform, and the calculation, are obtained and discussed.

This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. GaN HEMTs possess fast switching characteristics that enable high efficiency and power density in power conversion devices. However, these characteristics also pose challenges in protecting against short circuits and overcurrent situations. The proposed method detects short-circuit events by monitoring an instantaneous drop in the DC bus voltage of a circuit with GaN HEMTs applied and uses a bandpass filter to prevent the malfunction of the short-circuit protection circuit during normal switching and ensure highly reliable operation. Using this method, the short-circuit detection time of E-mode GaN HEMTs can be reduced to 257 ns, successfully protecting the device without malfunctions even in severe short-circuit situations occurring at high DC link voltages.

Overshoot and undershoot caused by the current load impact the accuracy of the required output voltage and circuit performance. The transient response issue in existing low-dropout (LDO) regulators is a dynamic specification that must be addressed at the design stage. This transient response is influenced by system parameters such as stability and gain. The LDO regulator suggested in this study is designed to minimize the change in output voltage by considerably enhancing the gain using a dynamic dual buffer structure. A dynamic dual buffer is utilized to effectively control undershoot and overshoot. Under the conditions that the input voltage range is from 3.3 to 4.5 V, the maximum load current is 300 mA, the output voltage is 3 V, and the output of the proposed LDO regulator with the dynamic dual buffer structure has undershoot and overshoot voltages of 41 mV and 31 mV, respectively. That is, the output voltage of the proposed LDO regulator effectively provided and discharged an additional current suited for the undershoot/overshoot conditions to enhance the transient response characteristics. Furthermore, the electrostatic discharge (ESD) robustness characteristics of the proposed LDO regulator improved because of the silicon-controlled rectifier underlying the ESD protection device embedded in the output node and power line.

An improved low-power hiccup-mode technology for short-circuit protection is proposed in this paper, which can effectively suppress short-circuit currents and greatly minimize the power dissipation of hiccup mode. The circuit can start normally after the short circuit is recovered, and there is no voltage overshoot. At the same time, the proposed pre-charge circuit can effectively suppress the large initial inrush current in the pre-charge stage. These technologies are used in a Peak-Current-Mode-Control (PCMC) Pulse-Width-Modulation (PWM) DC-DC boost converter designed with a 0.35 standard CMOS process. Compared with the conventional structure, the post-simulation results show that the initial inrush current during the start-up phase in the proposed structure is reduced by about 90%. When the output short circuit occurs, the inductor current drops to approximately zero and the power dissipation of the converter is very low at this time. The converter repeatedly detects the state of the output load after a period of about 24 ms. Eventually, the converter will restart after the short circuit is recovered and there is no voltage overshoot.

Safety issues with lithium-ion batteries prevent their widespread use in critical areas of technology. Various types of protective systems have been proposed to prevent thermal runaway and subsequent battery combustion. Among them, thermoresistive systems, representing polymer composites that sharply increase their resistance when the temperature rises, have been actively investigated. However, they are triggered only when the heating of the battery has already occurred, i.e., the system undergoes irreversible changes. This paper describes a new type of protective polymer layer based on the intrinsically conducting polymer poly[Ni(CH3OSalen)]. The response mechanism of this layer is based on an increase in resistance both when heated and when the cell voltage exceeds the permissible range. This makes it possible to stop undesirable processes at an earlier stage. The properties of the polymer itself and of the lithium-ion batteries modified by the protective layer have been studied. It is shown that the introduction of the polymer protective layer into the battery design leads to a rapid increase of the internal resistance at short circuit, which reduces the discharge current and sharply reduces the heat release. The effectiveness of the protection is confirmed by analysis of the battery components before the short circuit and after it.

During the short-circuit fault of a two-level bridge converter based on silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs), the SiC MOSFETs may fail within a few microseconds without short-circuit protection. The short-circuit protection of SiC MOSFETs is an essential feature for improving the reliability of converters. This study proposes an improved short-circuit protection method for medium-voltage SiC MOSFETs subjected to shoot-through conditions. In the protection method, the gate–source voltage of the SiC MOSFETs in a half bridge is detected to determine whether a shoot-through short circuit occurs or not. A desaturation protection circuit based on V DS measurement for a short circuit is also designed for overcurrent. The protection circuit’s validity is verified by the experimental results. Compared with conventional commercial driver integrated circuits, the proposed method can detect and turn off SiC MOSFETs in 0.2 μs under the shoot-through condition. Desaturation protection can be completed in 0.5 μs when overcurrent occurs.

The main causes of electric motor failures are transients at power supply interruption and short circuit in stator windings. Most of the failures are due to short circuits. Phase-to-phase short circuits refer to the most severe damage of electrical installations, which are also dangerous for other intact electric consumers. Therefore, electrical plants require a high-speed protection against phase-to-phase short circuits in the stator windings and connections with the commutator. The most difficult to detect are turn-to-turn (or inter-turn) faults in stator windings, especially when a small number of winding turns is shorted. Currently, there is no standard way to detect turn-to-turn short circuits in stator windings. It is difficult to detect turn-to-turn fault in magnitude of phase currents, so it is complicated to provide sufficient protection sensitivity. Thus, the development of new protection devices for detect turn-to-turn short circuit is considered relevant. The article presents a three-phase current sensor based on measuring the magnetic field from the three phases simultaneously. This method will identify turn-to-turn and phase-to-phase short circuits by magnetic-field pattern. The presented method increases the protection sensitivity and speed of protection response. The effectiveness of the proposed method is demonstrated by mathematical modeling.

Quantized electric quadrupole insulators have recently been proposed as novel quantum states of matter in two spatial dimensions. Gapped otherwise, they can feature zero-dimensional topological corner mid-gap states protected by the bulk spectral gap, reflection symmetries and a spectral symmetry. Here we introduce a topolectrical circuit design for realizing such corner modes experimentally and report measurements in which the modes appear as topological boundary resonances in the corner impedance profile of the circuit. Whereas the quantized bulk quadrupole moment of an electronic crystal does not have a direct analogue in the classical topolectrical-circuit framework, the corner modes inherit the identical form from the quantum case. Due to the flexibility and tunability of electrical circuits, they are an ideal platform for studying the reflection symmetry-protected character of corner modes in detail. Our work therefore establishes an instance where topolectrical circuitry is employed to bridge the gap between quantum theoretical modelling and the experimental realization of topological band structures.

The transfer of topological concepts from the quantum world to classical mechanical and electronic systems has opened fundamentally different approaches to protected information transmission and wave guidance. A particularly promising emergent technology is based on recently discovered topolectrical circuits that achieve robust electric signal transduction by mimicking edge currents in quantum Hall systems. In parallel, modern active matter research has shown how autonomous units driven by internal energy reservoirs can spontaneously self-organize into collective coherent dynamics. Here, we unify key ideas from these two previously disparate fields to develop design principles for active topolectrical circuits (ATCs) that can self-excite topologically protected global signal patterns. Realizing autonomous active units through nonlinear Chua diode circuits, we theoretically predict and experimentally confirm the emergence of self-organized protected edge oscillations in one- and two-dimensional ATCs. The close agreement between theory, simulations, and experiments implies that nonlinear ATCs provide a robust and versatile platform for developing high-dimensional autonomous electrical circuits with topologically protected functionalities.