Journal Article

Short-Circuit Detection and Protection Strategies for GaN E-HEMTs in High-Power Applications: A Review

Garrido Díez, David, Baraia-Etxaburu, Igor, Gezala Rodero, Haitz, Aizpuru Larrañaga, Iosu

2025

Overview

Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters.

• Publisher: MDPI AG
• Subject: Circuit protection / Circuits / Comparative analysis / Desaturation / Electrons / Gallium nitrate / Gallium nitrides / High electron mobility transistors / Nitrides / Power converters / Semiconductor devices / Short circuits / Silicon carbide / Silicon compounds / Technology application / Transistors