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Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
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Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
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Journal Article
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
2014
Overview
Nitride-based semiconductors are gaining importance not only for high-power applications but also for high-temperature electronic devices. Using photoluminescence (PL) techniques, it is now possible to simultaneously determine the temperatures of the lattice and hot electrons in these devices. Therefore, it is possible to use PL mapping measurements to derive temperature profiles for electrons and the lattice in the active region of an operating device with a single set of measurements. This work presents an experimental process to construct such spatially resolved temperature maps for a planar semiconductor device under bias and applies this approach to a specific example using the conductive channels of a biased AlGaN/GaN high-electron-mobility transistor. Studying the temperature distribution inside the conductive channels will help understand how electrons flowing in the device interact with the lattice as well as the process of heat generation within the device.
Publisher
Springer US,Springer,Springer Nature B.V
Subject
/ Characterization and Evaluation of Materials
/ Chemistry and Materials Science
/ Condensed matter: electronic structure, electrical, magnetic, and optical properties
/ Electronics and Microelectronics
/ Exact sciences and technology
/ Optical and Electronic Materials
/ Physics
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
