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Tunable Current-Mode First-Order Resistorless Multifunction Filter Using CMOS DX-MOCCII
by
Makhdoomi, Basit Shafat
, Ashok Kumar
, Kushwaha, Ajay Kumar
in
Circuits
/ CMOS
/ Current conveyors
/ Electrical Engineering
/ Engineering
/ Metal oxide semiconductors
/ Passive components
/ Process parameters
/ Resistors
/ Transistors
2024
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Tunable Current-Mode First-Order Resistorless Multifunction Filter Using CMOS DX-MOCCII
by
Makhdoomi, Basit Shafat
, Ashok Kumar
, Kushwaha, Ajay Kumar
in
Circuits
/ CMOS
/ Current conveyors
/ Electrical Engineering
/ Engineering
/ Metal oxide semiconductors
/ Passive components
/ Process parameters
/ Resistors
/ Transistors
2024
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Do you wish to request the book?
Tunable Current-Mode First-Order Resistorless Multifunction Filter Using CMOS DX-MOCCII
by
Makhdoomi, Basit Shafat
, Ashok Kumar
, Kushwaha, Ajay Kumar
in
Circuits
/ CMOS
/ Current conveyors
/ Electrical Engineering
/ Engineering
/ Metal oxide semiconductors
/ Passive components
/ Process parameters
/ Resistors
/ Transistors
2024
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Tunable Current-Mode First-Order Resistorless Multifunction Filter Using CMOS DX-MOCCII
Journal Article
Tunable Current-Mode First-Order Resistorless Multifunction Filter Using CMOS DX-MOCCII
2024
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Overview
This article realizes a novel design for a first-order current-mode multifunction filter with many outputs and a single input. One dual-X second-generation multioutput current conveyor (DX-MOCCII) is the one active building block in the proposed filter circuit. A single capacitor and an NMOS transistor working in the linear region are the only externally employed passive components. By acting as a linear resistor, nMOS transistors require a smaller area than traditional resistors and allow the design of tunable current mode filter circuits. The realized current-mode filter provides one high-pass, one all-pass, and two low-pass responses at different outputs. The pole frequency of the first-order filter circuit can be adjusted considerably using an NMOS transistor. The theoretical conclusions are validated using the PSPICE program simulator and the 0.18 µm CMOS process parameters.
Publisher
Pleiades Publishing,Springer Nature B.V
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