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Transient Carrier Transport Mechanisms in GaN-Based Micro-LEDs under Femtosecond Photoexcitation
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Transient Carrier Transport Mechanisms in GaN-Based Micro-LEDs under Femtosecond Photoexcitation
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Journal Article
Transient Carrier Transport Mechanisms in GaN-Based Micro-LEDs under Femtosecond Photoexcitation
2025
Overview
GaN-based Micro-LEDs, representative devices of third-generation wide-bandgap semiconductors, exhibit significant nonlinear photoluminescence (PL) properties under ultrafast femtosecond laser excitation, governed predominantly by multiphoton absorption processes. In this study, we systematically investigate photocarrier transport and recombination dynamics under various bias voltages and excitation powers using an ultrafast (∼7.5 fs) femtosecond spectroscopy system. Experimental results indicate that applying forward bias enhances PL emission dramatically by promoting radiative recombination within localized states in quantum wells, due to increased quantum-well energy-band tilting. Conversely, a reverse bias flattens the quantum-well band structure, significantly facilitating carrier drifting, thereby suppressing radiative recombination and enhancing photovoltage responses. The power-dependent analysis further reveals that nonlinear PL responses exhibit power law fitting slopes consistently greater than 2, confirming the active involvement of multiphoton absorption mechanisms. Based on these findings, a comprehensive “field modulation - nonlinear excitation” model is proposed, providing essential theoretical insights and experimental support for the future design and optimization of high-speed optoelectronic devices and highly integrated Micro-LED display applications.
Publisher
IOP Publishing
