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MEASUREMENT OF SILICON MELT TEMPERATURE DURING ELECTRON BEAM REFINING
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Journal Article
MEASUREMENT OF SILICON MELT TEMPERATURE DURING ELECTRON BEAM REFINING
2023
Overview
A method for measuring the temperature of the silicon melt during plasma-chemical electron-beam refining is proposed. The method is based on measuring the radiation intensity from the melt in the infrared range and comparing it with the temperature. It is established that changing the refining conditions, in particular, the electron beam current allows a controlled change in the temperature refined silicon from 1500 K to 2600 K.
Publisher
Pleiades Publishing,Springer Nature B.V
Subject
