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A Deep Insight into the Electronic Properties of CIGS Modules with Monolithic Interconnects Based on 2D Simulations with TCAD
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A Deep Insight into the Electronic Properties of CIGS Modules with Monolithic Interconnects Based on 2D Simulations with TCAD
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Journal Article
A Deep Insight into the Electronic Properties of CIGS Modules with Monolithic Interconnects Based on 2D Simulations with TCAD
2019
Overview
The aim of this work is to provide an insight into the impact of the P1 shunt on the performance of ZnO/CdS/Cu(In,Ga)Se2/Mo modules with monolithic interconnects. The P1 scribe is a pattern that separates the back contact of two adjacent cells and is filled with Cu(In,Ga)Se2 (CIGS). This scribe introduces a shunt that can affect significantly the behavior of the device, especially under weak light conditions. Based on 2D numerical simulations performed with TCAD, we postulate a mechanism that affects the current flow through the P1 shunt. This mechanism is similar to that of a junction field effect transistor device with a p-type channel, in which the current flow can be modulated by varying the thickness of the channel and the doping concentration. The results of these simulations suggest that expanding the space charge region (SCR) into P1 reduces the shunt conductance in this path significantly, thus decreasing the current flow through it. The presented simulations demonstrate that two fabrication parameters have a direct influence on the extension of the SCR, which are the thickness of the absorber layer and its acceptor concentration.
Publisher
MDPI AG
Subject
