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Research on Parallel Reading and Drawing Techniques for Chemical Mechanical Polishing Simulation Data Based on Multi-Thread
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Research on Parallel Reading and Drawing Techniques for Chemical Mechanical Polishing Simulation Data Based on Multi-Thread
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Journal Article
Research on Parallel Reading and Drawing Techniques for Chemical Mechanical Polishing Simulation Data Based on Multi-Thread
2024
Overview
In advanced integrated circuit manufacturing, the quality of chemical mechanical polishing (CMP) is a key factor affecting chip performance and yield. Designers need to use CMP simulation tools to locate and analyze the defects in the layout after the CMP process. However, the advancement of process nodes and the increase in data volume presents a great challenge to the speed of graphical display of CMP simulation data. To solve this issue, we propose a solution that uses multi-threading technology to optimize both data reading and drawing. In the process of data reading, we employ OpenMP and memory mapping (Mmap) technology to achieve parallel reading of file segmentation and propose a fast-string conversion algorithm based on the properties of simulation data. In the process of data drawing, we propose an adaptive downsampling method for data graphical display that combines multi-threading and double buffering technology to enable the parallel drawing of layouts. The effectiveness of this method is verified by testing CMP simulation data of various scales. Compared to traditional methods, this approach improves reading efficiency by over 8 times and drawing efficiency by more than 10 times. Furthermore, it enhances the smoothness of interaction with the CMP simulation tool.
Publisher
MDPI AG
