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Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films
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Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films
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Journal Article
Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films
2024
Overview
In this study, the characteristics of phosphorus-doped hydrogenated amorphous silicon carbide prepared by radio-frequency glow discharge decomposition of a mixture of silane (SiH4), methane (CH4) and hydrogen (H2) were investigated. Molecular vibration, surface morphology, dark electrical conductivity, and activation energy were analyzed. The gas phase composition of CH4 was varied in the range of 0.40–0.95 relative to SiH4, while the molar fraction of phosphine (PH3) in the gas phase was adjusted from 2.75% to 10%. It was observed that the molar fraction of carbon (C) in the film affects its homogeneity, resulting in the formation of regions rich in silicon (Si) and amorphous silicon carbide (a-SixC1−x), as well as the formation of nc-Si clusters, leading to lower surface roughness. The variation in electrical properties concerning doping and the molar fraction of carbon is consistently explained in this study.
