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Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells
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Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells
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Journal Article
Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells
2023
Overview
The microstructure factor (
R*
) of the PECVD-grown intrinsic amorphous silicon (i-a-Si:H) layer plays a crucial role in crystalline silicon (c-Si) surface passivation and charge carrier transport in silicon heterojunction (SHJ) solar cells. In this work, we have used stack of i-a-Si:H passivation layers deposited at two different temperatures to improve the c-Si surface passivation by minimizing the interface defect density at the a-Si/c-Si interface. The initial i
1
-a-Si:H layer is deposited on the c-Si at ~ 150 °C with a high
R*
, and the second i
2
-a-Si:H layer is deposited at 230 °C with a low
R*
. Ex-situ ellipsometry analysis of i-a-Si:H layers provided information related to the void fraction of the thin films due to modification in the Si–H
≥2
and Si–H bonding environment, which plays a vital role in atomic H migration towards i-a-Si:H/c-Si interface. Combining the low- and high-temperature i-a-Si:H layer stack enhanced the cell precursor passivation to ~ 2.1 ms with an implied
V
oc
of ~ 714 mV. Furthermore, implementing the optimized thickness (2 nm + 8 nm) of the i-a-Si:H stack (with 40% void fraction in i
1
-a-Si:H layer) in the device has led to the power conversion efficiency of ~ 19.06%.
Publisher
Springer Berlin Heidelberg,Springer Nature B.V
