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Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding
by
Zou, Fuxiang
, Hu, Xiaoming
, Kuang, Zhixiang
, Chen, Xin
, Jiang, Shangwei
, Fan, Xi’an
in
Barrier layers
/ Bonding strength
/ Cold
/ Diffusion barriers
/ Diffusion layers
/ Diffusion welding
/ Electrical resistivity
/ Interfaces
/ Interfacial bonding
/ Intermetallic compounds
/ Plasma sintering
/ Plating
/ Powder metallurgy
/ Temperature
/ Thermoelectricity
/ Thickness
2024
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Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding
by
Zou, Fuxiang
, Hu, Xiaoming
, Kuang, Zhixiang
, Chen, Xin
, Jiang, Shangwei
, Fan, Xi’an
in
Barrier layers
/ Bonding strength
/ Cold
/ Diffusion barriers
/ Diffusion layers
/ Diffusion welding
/ Electrical resistivity
/ Interfaces
/ Interfacial bonding
/ Intermetallic compounds
/ Plasma sintering
/ Plating
/ Powder metallurgy
/ Temperature
/ Thermoelectricity
/ Thickness
2024
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Do you wish to request the book?
Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding
by
Zou, Fuxiang
, Hu, Xiaoming
, Kuang, Zhixiang
, Chen, Xin
, Jiang, Shangwei
, Fan, Xi’an
in
Barrier layers
/ Bonding strength
/ Cold
/ Diffusion barriers
/ Diffusion layers
/ Diffusion welding
/ Electrical resistivity
/ Interfaces
/ Interfacial bonding
/ Intermetallic compounds
/ Plasma sintering
/ Plating
/ Powder metallurgy
/ Temperature
/ Thermoelectricity
/ Thickness
2024
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Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding
Journal Article
Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding
2024
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Overview
In order to improve the stability of Bi2Te3-based thermoelectric devices, we attempted to prepare a barrier layer via diffusion welding using Co powder as the barrier materials. The diffusion welding process was conducted at 674 K for a duration of 5 min. The optimal connection was achieved at the interfaces of Co/Bi0.4Sb1.6Te3 and Co/Bi2Te2.7Se0.3. The results showed that the Co/Bi0.4Sb1.6Te3 joint had diffusion thickness of 1.6 µm, contact resistivity of 0.83 µΩ cm2, and bonding strength of 4.86 MPa for the barrier layer. Similarly, the Co/Bi2Te2.7Se0.3 joint had diffusion thickness of 1.6 µm, contact resistivity of 0.75 µΩ cm2, and bonding strength of 3.99 MPa for the barrier layer. The thermoelectric device fabricated through this process exhibited a hot–cold cycle number of 35,000, which was significantly higher than the device with a Ni-based barrier layer under similar experimental conditions. Thus, it indicates that Co is a promising material for the preparation of barrier layers in Bi2Te3-based thermoelectric devices.
Publisher
Springer Nature B.V
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