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Failure Estimates for SiC Power MOSFETs in Space Electronics
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Failure Estimates for SiC Power MOSFETs in Space Electronics
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Journal Article
Failure Estimates for SiC Power MOSFETs in Space Electronics
2018
Overview
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space.
