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Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
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Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
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Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
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Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
Journal Article

Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure

2012
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Overview
The spin–orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example in which the spin–orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless surface or edge states. Another example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of the spin–orbit interaction under broken inversion symmetry. It is of particular importance to know how these two effects, that is, the non-trivial topology of electronic states and the Rashba spin splitting, interplay with each other. Here we show through sophisticated first-principles calculations that BiTeI, a giant bulk Rashba semiconductor, turns into a topological insulator under a reasonable pressure. This material is shown to exhibit several unique features, such as a highly pressure-tunable giant Rashba spin splitting, an unusual pressure-induced quantum phase transition, and more importantly, the formation of strikingly different Dirac surface states at opposite sides of the material. The spin–orbit interaction affects the electronic structure of many solids to give rise to a host of unusual phenomena. Bahramy et al. theoretically examine its role in the non-centrosymmetric compound BiTeI, and find that under the application of pressure, it leads to topologically insulating behaviour.