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Dual phase high temperature Si3N4/Al(Ti)N films with tunable thermal conductivity
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Dual phase high temperature Si3N4/Al(Ti)N films with tunable thermal conductivity
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Journal Article
Dual phase high temperature Si3N4/Al(Ti)N films with tunable thermal conductivity
2025
Overview
Engineering amorphous dielectric films with tunable thermal conductivity is advantageous for the thermal management of semiconductor devices and thermal insulation of aerospace applications. Here, we demonstrate that incorporating dense dispersed amorphous Al(Ti)N (~1 nm or above) nanoparticles having phase volume fractions from 6 to 70 %, has a negligible effect on the intrinsic thermal conductivity of the amorphous Si
3
N
4
matrix (~2 W m
−1
K
−1
), in which the wave-like ‘propagons’ in Allen-Feldmann theory are believed to be unsupressed and non-tuned. By contrast, incorporating (5–15 nm) crystalline TiN phases significantly increases the thermal conductivity (up to 15 W m
−1
K
−1
). Critically, the micrometre-thick Si
3
N
4
/AlN and Si
3
N
4
/TiN amorphous matrix dual-phase nanocomposite coatings exhibit excellent thermal stability upon exposure to ambient air at 1000 °C for 50 h. These findings shed light on the phonon transport mechanism regarding the effects of the second phase and pave a design pathway for engineering amorphous coatings displaying unprecedented high thermal conductivity and excellent thermal stability.
Amorphous films with tunable thermal conductivity are needed for semiconductor/aerospace fields. Amorphous Al(Ti)N nanoparticles have negligible effect on thermal conductivity of Si
3
N
4
2 W m
−1
K
−1
, while incorporating crystal TiN phases increases to 15 W m
−1
K
−1
.
