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Large single crystal growth, transport property and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2

by Butler, C. J. , Lin, M.-T. , Panneer Muthuselvam, I. , Zeljkovic, I. , Chou, F. C. , Karna, Sunil K. , Guo, S.-T. , Madhavan, V. , Huang, F.-T. , Chu, M.-W. , Xu, S.-Y. , Hasan, M. Z. , Sankar, R. , Jayavel, R. , Lee, W. L. , Neupane, M.

in 142/136 / 639/766/119 / 639/766/119/2792 / CD3 antigen / Crystal growth / Crystals / Electrical properties / Electron microscopy / Growth conditions / Humanities and Social Sciences / multidisciplinary / Scanning tunneling microscopy / Science / Short term memory / Single crystals / Spectroscopy / Thermodynamics / Transmission electron microscopy / Vacuum

2015

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Large single crystal growth, transport property and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2

2015

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Large single crystal growth, transport property and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2

2015

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Journal Article

Large single crystal growth, transport property and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2

Butler, C. J.,

Lin, M.-T.,

Panneer Muthuselvam, I.,

Zeljkovic, I.,

Chou, F. C.,

Karna, Sunil K.,

Guo, S.-T.,

Madhavan, V.,

Huang, F.-T.,

Chu, M.-W.,

Xu, S.-Y.,

Hasan, M. Z.,

Sankar, R.,

Jayavel, R.,

Lee, W. L.,

Neupane, M.

2015

Overview

The three dimensional (3D) Dirac semimetal is a new quantum state of matter that has attracted much attention recently in physics and material science. Here, we report on the growth of large plate-like single crystals of Cd 3 As 2 in two major orientations by a self-selecting vapor growth (SSVG) method and the optimum growth conditions have been experimentally determined. The crystalline imperfections and electrical properties of the crystals were examined with transmission electron microscopy (TEM), scanning tunneling microscopy (STM) and transport property measurements. This SSVG method makes it possible to control the as-grown crystal compositions with excess Cd or As leading to mobilities near 5–10 5 cm 2 V −1 s −1 . Zn-doping can effectively reduce the carrier density to reach the maximum residual resistivity ratio (RRR ρ 300K /ρ 5K ) of 7.6. A vacuum-cleaved single crystal has been investigated using angle-resolved photoemission spectroscopy (ARPES) to reveal a single Dirac cone near the center of the surface Brillouin zone with a binding energy of approximately 200 meV.

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Publisher

Nature Publishing Group UK,Nature Publishing Group

Subject

/ Electrical properties